Globalfoundries has announced the launch of a new 22nm semiconductor process technology platform developed specifically to meet the ultra-low-power requirements of next-generation connected devices.
Dubbed 22FDX, the technology delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies providing an optimal solution for the rapidly evolving mainstream mobile, Internet-of-Things (IoT), RF connectivity and networking markets. The 22nm FD-SOI platform of four processes is based on a licensing deal which Globalfoundries had originally signed with STMicroelectronics back in 2012.
“While some applications require the ultimate performance of 3D FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost,” said GlobalFoundries.
“22FDX provides the best path for cost-sensitive applications by [making use of] the industry’s first 22nm, 2D, FD-SOI technology.”
22FDX offers an operating voltage of 0.4V enabling ultra-low dynamic power consumption, less thermal impact, and smaller end-product form-factors, the company said. The 22FDX platform also delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.
“The 22FDX platform enables our customers to deliver differentiated products with the best balance of power, performance and cost,” said company CEO Sanjay Jha.
“In an industry first, 22FDX provides real-time system software control of transistor characteristics: the system designer can dynamically balance power, performance, and leakage. Additionally, for RF and analog integration, the platform delivers best scaling combined with highest energy efficiency.”
Announced customers include STMicroelectronics, Freescale, ARM, VeriSilicon Holdings, Imagination Technologies, IBS, CEA-Leti and others.
The 22FDX platform consists of a host of differentiated products to support the needs of various applications-
- 22FD-ulp: For the mainstream and low-cost smartphone market with ultra-low power consumption as an alternative to FinFET.
- 22FD-uhp: For networking applications with analog integration, this offering is optimized to achieve the same ultra-high performance capabilities of FinFET while minimizing energy consumption.
- 22FD-ull: The ultra-low leakage offering aimed at wearables and IoT delivers the same capabilities of 22FD-ulp but with reduced leakage to as low as 1pa/um.
- 22FD-rfa: The radio frequency analog offering delivers 50 percent lower power at reduced system cost to meet requirements of high-volume RF applications such as LTE-A cellular transceivers, high-order MIMO WiFi combo chips, and millimeter wave radar.
GlobalFoundries said that design starter kits and early versions of process design kits are available now, with risk production to start in the second half of 2016. Mass-produced 22FDX chips are to be expected rolled out in 2017.